A method for fabricating silicon quantum wires based on SiGe/Si heterostructure
نویسندگان
چکیده
A method for fabricating silicon quantum wires with SiO2 boundaries is presented. It is accomplished by first growing Si/SiGe/Si heterostructure on silicon substrate with very low-pressure chemical vapor deposition, followed by lithography and reactive ion etching to form trench structures. Finally, the selective chemical etching of SiGe over silicon and subsequent thermal oxidation are carried out to generate expected silicon quantum wires. The result observed is demonstrated using scanning electron microscopy. Furthermore, the thermal oxidation characteristics of the silicon wires are investigated. The present method provides a well-controllable way to fabricate silicon quantum wires and is fully compatible with silicon microelectronic technology. © 1996 American Institute of Physics. @S0003-6951~96!01103-5#
منابع مشابه
Realization of silicon quantum wires based on Si/SiGe/Si heterostructure
We report on the successful fabrication of silicon quantum wires with SiO 2 boundaries on SiGe/Si heterostructures by combining Si/SiGe/Si heteroepitaxy, selective chemical etching, and subsequent thermal oxidation. The observational result of scanning electron microscope is demonstrated. The present method provides a well-controllable way to fabricate silicon quantum wires. PACS: 81.15; 81.60;...
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